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(R)
MMBT3904
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
Type MMBT3904
s
Marking 34
s
s s
SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT3906 SOT-23
APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature
o
Value 60 40 6 200 350 -65 to 150 150
Unit V V V mA mW
o o
C C
June 2002
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MMBT3904
THERMAL DATA
R thj-amb * Thermal Resistance Junction-Ambient
2
Max
357.1
o
C/W
* Device mounted on a PCB area of 1 cm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEX I BEX Parameter Collector Cut-off Current (V BE = -3 V) Base Cut-off Current (V BE = -3 V) Test Conditions V CE = 30 V V CE = 30 V I C = 1 mA 40 Min. Typ. Max. 50 50 Unit nA nA V
V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain
I C = 10 A
60
V
V (BR)EBO
I E = 10 A
6
V
V CE(sat) V BE(sat) h FE
I C = 10 mA I C = 50 mA I C = 10 mA I C = 50 mA IC IC IC IC IC = = = = = 0.1 mA 1 mA 10 mA 50 mA 100 mA
I B = 1 mA I B = 5 mA I B = 1 mA I B = 5 mA V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V f = 1 MHz f = 1MHz 0.65 60 80 100 60 30 250 270 4 18 5
0.2 0.2 0.85 0.95
V V V V
300
fT C CBO C EBO NF td tr
Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure Delay Time Rise Time
I C = 10 mA V CE = 20 V f = 100 MHz IE = 0 IC = 0 V CB = 10 V V EB = 0.5 V
MHz pF pF dB 35 35 200 50 ns ns ns ns
V CE = 5 V IC = 0.1 mA f = 10 Hz to 15.7 KHz R G = 1 K I C = 10 mA V CC = 30 V I B = 1 mA I B1 = -I B2 = 1 mA
ts Storage Time I C = 10 mA Fall Time V CC = 30 V tf Pulsed: Pulse duration = 300 s, duty cycle 2 %
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MMBT3904
SOT-23 MECHANICAL DATA
mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7
DIM.
0044616/B
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MMBT3904
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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